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A derivative of triterpene glycoside, ganoderic acid I (GAI), was isolated and purified from the fruiting bodies of Ganoderma lucidum. The compound exhibited significant inhibitory activity against the proliferation of human umbilical vein endothelial cells (HUVECs) in a dose-dependent manner. GAI inhibited the expression of VEGF in human umbilical vein endothelial cells (HUVECs) as analyzed by RT-PCR and Western blotting. GAI also inhibited the proliferation of vascular endothelial growth factor (VEGF)-transfected cells. However, no significant change was observed in the expression of VEGF receptors such as Flt-1 and KDR as analyzed by Western blotting. The inhibitory effect of GAI on endothelial cell proliferation was comparable to that of 17beta-estradiol. These results suggest that GAI may play a role in the suppression of tumor angiogenesis through its inhibition of VEGF expression.1. Field of the Invention
The present invention generally relates to manufacturing semiconductor devices and more particularly to a method of forming a semiconductor device on a substrate using a liquid phase deposition process.
2. Background Description
Semiconductor devices are used in a variety of applications including high power switching applications and high current applications. For example, static random access memory (SRAM) devices have applications in cache memories, embedded SRAMs, and as storage buffers for storage devices such as hard disks and optical disks. SRAM devices are used in communications systems for circuit switching and as embedded memories for portable electronic devices. ac619d1d87
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